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One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure.

Kim, Hyun Ho; Yang, Bowen; Patel, Tarun; Sfigakis, Francois; Li, Chenghe; Tian, Shangjie; Lei, Hechang; Tsen, Adam W.
Nano Lett; 18(8): 4885-4890, 2018 08 08.
Artigo em Inglês | MEDLINE | ID: mdl-30001134
We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI3, as the active layer. At constant voltage bias, current increases by nearly one million percent upon application of a 2 T field. The effect arises from a change between antiparallel to parallel alignment of spins across the different CrI3 layers. Our results elucidate the nature of the magnetic state in ultrathin CrI3 and present new opportunities for spintronics based on two-dimensional materials.
Selo DaSilva